Transistors RF MOSFET Power RFP-LDMOS GOLDMOS 8
PTFA082201EV1: Transistors RF MOSFET Power RFP-LDMOS GOLDMOS 8
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Configuration : | Single | Transistor Polarity : | N-Channel |
Frequency : | 869 MHz to 894 MHz | Gain : | 18 dB |
Output Power : | 220 W | Drain-Source Breakdown Voltage : | 65 V |
Continuous Drain Current : | 1.95 A | Gate-Source Breakdown Voltage : | 12 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | H-36260-2 |
Packaging : | Tray |